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Chemical Mechanical Planarization (CMP)

Controlling DO helps manage oxidation and corrosion on wafer surfaces. Precise DO control ensures uniform polishing, reduces defects, and enhances the effectiveness of the planarization process.

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Epitaxy

The growth of thin crystalline layers on wafers is highly sensitive to DO levels. Maintaining ultra-low DO supports consistent layer growth and optimal electrical properties, directly impacting device performance.

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